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| polyfet rf devices SP741 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 125 V Drain to Source Voltage 125 V Gate to Source Voltage 20 V 2.5 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 50 TYP 25.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.20 A, Vds = 50.0 V, F = Idq = 0.20 A, Vds = 50.0 V, F = 400 MHz 400 MHz VSWR Relative Idq = 0.20 A, Vds = 50.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 0.8 2.50 3.50 48.0 0.2 17.0 MIN 125 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 10.00 mA, Vgs = 0V Vds = 50.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.05 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 1.00 A Vgs = 20V, Vds = 10V Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SP741 POUT VS PIN GRAPH SP741 Pin vs Pout Freq=400MHz, VDS=50V, Idq=.2A 18.00 32 17.00 28 24 20 16 12 8 4 0 0 0.5 1 1.5 PIN IN WATTS 2 2.5 3 100 CAPACITANCE VS VOLTAGE S1E 1 DIE CAPACITANCE Ciss Pout 16.00 10 15.00 Coss 1dB compression = 22 watts 14.00 13.00 1 Crss Gain Efficiency = 50% 12.00 11.00 10.00 0.1 0 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS IV CURVE S1E 1 DIE IV 4 3.5 3 ID IN AMPS 2.5 2 1.5 1 0.5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6v INVOLTS vg=8v 14 0 16 18 vg=12v 20 ID & GM VS VGS 10.00 S1E 1 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 1.00 gM 0.10 0.01 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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